![]() ![]() The steady-state base current in the on state determines R2. then, the value of R1 is determined from the initial current spike requirement. ![]() The values of Vi, R1, R2, and C must be selected for the BJT base drive circuit. Reducing drive circuit resistance significantly reduces the switching time and power loss for the MOSFET. For the second circuit, peak gate current is 402 mA (and -837 mA), average gate current is zero, and rms gate current is 109 mA.įor R1 = 75 Ω, toff ≈ 1.2 μs, ton ≈ 0.6 μs, and PMOS ≈ 30 W.įor R1 = 50 Ω, toff ≈ 0.88 μs, ton ≈ 0.42 μs, and PMOS ≈ 22 W.įor R1 = 25 Ω, toff ≈ 0.54 μs, ton ≈ 0.24 μs, and PMOS ≈ 14 W. Power is thenī) For the first circuit, peak gate current is 127 mA, average gate current is zero, and rms gate current is 48.5 mA. Restrict the data to 5 µs to 5.3 µs, giving 12.8 µJ for turn-on. Power is determined asįor the emitter-follower drive circuit restrict the data to 2.5 µs to 2.9 µs, giving 21.3 µJ for turn-off. The energy absorbed by the MOSFET is 53.3 µJ. For turn-on losses, restrict the data to 5 µs to 5.6 µs. For turn-off losses, restrict the data to 2.5 µs to 4.3 µs. In Probe, the integral of instantaneous power is obtained by entering the expression S(W(M1)) to get the energy absorbed by the transistor. Entre para ver o arquivo original HartChapter10solutions.docĪ) For the elementary MOSFET drive circuit, losses can be determined from the energy absorbed by the transistor. ![]()
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